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EWA
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Halbleiter-Bauelemente
Galliumnitrid (GaN)
ESREF2017 - 28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, FRA, 07.2017, Microelectronics Reliability (Journal), doi: 10.1016/j.microrel.2017.06.046 [...] normally-off p-gate GaN HEMTs , ISPSD2017 - The 29th International Symposium on Power Semiconductor Devices and ICs, Sapporo, JPN, 06.2017, doi: 10.23919/ISPSD.2017.7988925 Unger, C. ; Pfost, M. ; Mocanu [...] Devices, 01.2017, doi: 10.1109/TED.2016.2633725 Unger, C. ; Pfost, M. ; Mocanu, M.; Waltereit, P.; Reiner, R. : Pulse robustness of AlGaN/GaN HEMTs with Schottky- and MIS-gates , ISPSD2017 - The 29th …